EPA120D-CP083 updated 01/13/2006 high efficiency heterojunction power fet specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 1 of 1 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised january 2006 all dimensions in mil tolerance: 3 mil features ? non-hermetic surface mount 160mil metal ceramic package ? +29 dbm output power at 1db compression ? 18.0 db gain at 2 ghz ? 0.5x1200 micron rece ssed ?mushroom? gate ? si 3 n 4 passivation ? advanced epitaxial doping profile provides high power efficiency, li nearity and reliability electrical characteristics (t a = 25 c) caution! esd sensitive device. symbol parameter/test conditions min typ max units p 1db output power at 1db compression f = 2.0 ghz vds = 8 v, ids=50% idss f = 4.0 ghz 27.5 29.0 29.0 dbm g 1db gain at 1db compression f = 2.0 ghz vds = 8 v, ids=50% idss f = 4.0 ghz 16.5 18.0 13.0 db pae power added efficiency at 1db compression vds = 8 v, ids=50% idss f = 2.0 ghz 44 % i dss saturated drain current v ds = 3 v, v gs = 0 v 210 360 510 ma g m transconductance v ds = 3 v, v gs = 0 v 240 380 ms v p pinch-off voltage v ds = 3 v, i ds = 3.6 ma -1.0 -2.5 v bv gd drain breakdown voltage i gd = 1.2 ma -13 -15 v bv gs source breakdown voltage i gs = 1.2 ma -7 -14 v r th * thermal resistance 45 50 o c/w notes: * overall rth depends on case mounting. maximum ratings at 25 o c symbols parameters absolute 1 continuous 2 vds drain-source voltage 12v 8v vgs gate-source voltage -5v -3v igsf forward gate current 5.4 ma 1.8 ma igsr reserve gate current 0.9 ma 0.3 ma pin input power 26 dbm @ 3db compression tch channel temperature 175 o c 175 o c tstg storage temperature -65/175 o c -65/175 o c pt total power dissipation 3.0 w 3.0 w note: 1. exceeding any of the above ratings may result in permanent damage. 2. exceeding any of the above ratings may reduce mttf below design goals. epa 120d
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